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            Silicon carbide substrate (powder ) sintering furnace
            Silicon carbide substrate or powder sintering furnace
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            details

            Use

            The furnace mainly used for sintering silicon carbide substrate or powder.

            Main configuration:

            1.Horizontal structure with built-in water cooling jacket. .

            2. Graphite rod as heating element, electric resistance heating.

            3 . Heating element along inner shell of furnace helps improving temperature uniformity.

            4. Sintering done under the vacuum conduces to enhancing the thermo-stability 

                and shock resistance of the sintered product.   

            5. Automatic control mode of PLC plus touching screen.

            Main technical parameters:

            No.

            Model

            Max. temperature

            Working zone

            Vacuum

            Atmosphere

            （WXHXD）mm

            1

            ZS-90-20

            2400℃

            400X400X1200

            1Pa

            Arg. Or N2

            2

            ZS-300-20

            2400℃

            500X500X1500

            1Pa

            Arg. Or N2

            3

            ZS-400-20

            2400℃

            600X600X1800

            1Pa

            Arg. Or N2

             Furnace can be customized on your request. 

             


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